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| Datasheet File OCR Text: |
| NTE5417 thru NTE5419 Silicon Controlled Rectifier (SCR) 10 Amp Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110C), VRRM NTE5417 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5418 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5419 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Repetitive Peak Off-State Voltage (TC = +110C), VDRM NTE5417 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5418 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5419 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On-State Current (TC = +80C, Conduction Angle of 180), IT(RMS) . . . . . . . . . . . . . . . . . . 10A Peak Surge (Non-Repetitive) On-State Current (One Cycle at 50 or 60Hz), ITSM . . . . . . . . . . 100A Peak Gate-Trigger Current (3s Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak Gate-Power Dissipation (IGT IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +110C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Typical Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Peak Off-State Current Maximum Peak On-State Voltage DC Holding Current DC Gate-Trigger Current DC Gate-Trigger Voltage Gate Controlled Turn-On Time Critical Rate of Off-State Voltage Symbol IRRM IDRM VTM IHOLD IGT VGT tgt Test Conditions VRRM = Max, VDRM = Max, TC = +110C IT = 10A Gate Open VD = 6VDC, RL = 60 VD = 6VDC, RL = 60 IGT = 100mA Min - - - - - - - - Typ - - - - - - 2.5 200 Max 0.5 0.5 1.8 30 25 1.5 - - Unit mA mA V mA mA V s V/s dv/dt Gate Open, TC = +100C (critical) .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max Isolated .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Cathode .100 (2.54) Gate Anode |
Price & Availability of NTE5419
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